Titlebook: Recent Advances in PMOS Negative Bias Temperature Instability; Characterization and Souvik Mahapatra Book 2022 Springer Nature Singapore Pt

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Physical Mechanism of NBTI Parametric Drift,ole trapping in pre-existing bulk gate insulator traps. Different methods for the direct quantification of generated interface traps (Charge Pumping and DCIV) and bulk traps (SILC), and pre-existing bulk traps (Flicker noise) are described. The impact of these underlying subcomponents on the time ki

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,BTI Analysis Tool (BAT) Model Framework—Interface Trap Occupancy and Hole Trapping,) during consecutive NBTI stress–recovery cycles. The hole trapping in preexisting bulk gate insulator traps is calculated by the ABDWT model. The TTOM-enabled RD as well as the combined TTOM-enabled RD and ABDWT models are validated by using measured NBTI parametric drift when only interface trap g

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BAT Framework Modeling of RMG HKMG SOI FinFETs, gate insulator stack. Modeling is done on ultra-fast measured data during and after DC stress at different stress and recovery biases and extended temperature range (from –40 °C to 150 °C), and during and after AC (Mode-B) stress at different stress bias and temperature. The framework is also used

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BAT Framework Modeling of RMG HKMG Si and SiGe Channel FinFETs,licon Germanium channel bulk p-FinFETs with RMG HKMG gate insulator stack. Modeling is done on ultra-fast measured data during and after DC and Mode-B AC stress at different stress bias and temperature. The impact of Germanium content in the channel and Nitrogen content in the gate insulator on the

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BAT Framework Modeling of RMG HKMG GAA-SNS FETs,s with RMG HKMG gate insulator stack. The ultra-fast measured stress and recovery data at different stress bias and temperature are modeled in devices having different sheet dimensions (length and width). The changes in voltage acceleration and temperature activation for changes in the sheet dimensi