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Titlebook: Recent Advances in PMOS Negative Bias Temperature Instability; Characterization and Souvik Mahapatra Book 2022 Springer Nature Singapore Pt

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发表于 2025-3-21 18:14:08 | 显示全部楼层 |阅读模式
书目名称Recent Advances in PMOS Negative Bias Temperature Instability
副标题Characterization and
编辑Souvik Mahapatra
视频video
概述Covers characterization methods, modelling techniques, and impact of device architectures and processes.Establishes accurate modelling of measured degradation for wide variety of MOSFET architectures.
图书封面Titlebook: Recent Advances in PMOS Negative Bias Temperature Instability; Characterization and Souvik Mahapatra Book 2022 Springer Nature Singapore Pt
描述.This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: ..Ultra-fastmeasurements and modelling of parametric drift due to NBTI in differenttransistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs andGAA-SNS p-FETs, with Silicon and Silicon Germanium channels. . .BTIAnalysis Tool (BAT), a comprehensive physics-based framework, to model themeasured time kinetics of parametric drift during and after DC and ACstress, at different stress and recovery biases and temperature, as wellas pulse duty cycle and frequency. . .TheReaction Diffusion (RD) model is used for generated interface traps,Transient Trap Occupancy Model (TTOM) for charge occupancy of thegenerated inter
出版日期Book 2022
关键词NBTI; MOSFET; FDSOI; FinFET; GAA-SNS FET; Si channel; SiGe channel; HKMG; Layout; Dimension Scaling; mechanica
版次1
doihttps://doi.org/10.1007/978-981-16-6120-4
isbn_softcover978-981-16-6122-8
isbn_ebook978-981-16-6120-4
copyrightSpringer Nature Singapore Pte Ltd. 2022
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https://doi.org/10.1007/978-981-16-6120-4NBTI; MOSFET; FDSOI; FinFET; GAA-SNS FET; Si channel; SiGe channel; HKMG; Layout; Dimension Scaling; mechanica
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,BTI Analysis Tool (BAT) Model Framework—Generation of Bulk Traps,libration is detailed. BAT is also used to determine the EOL degradation at use conditions in different devices. The BAT extrapolated EOL parametric drift is compared to empirical calculations (discussed in Chap.), and error associated with the latter is determined.
发表于 2025-3-22 15:51:30 | 显示全部楼层
BAT Framework Modeling of Gate First HKMG Si and SiGe Channel FDSOI MOSFETs, silicon germanium channel devices, and its impact is also modeled. The mechanism responsible for the above process changes is explained. The calibrated BAT framework is used to estimate the extrapolated degradation at EOL under use condition for devices having different processes.
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BAT Framework Modeling of Gate First HKMG Si Channel MOSFETs,ess-recovery kinetics from multiple small area devices. The extrapolated degradation at EOL under use condition is estimated from the calibrated BAT framework and compared to the conventional regression-based empirical methods for devices having different gate insulator processes. The error associated with the empirical methods is estimated.
发表于 2025-3-23 08:46:44 | 显示全部楼层
BAT Framework Modeling of RMG HKMG Si and SiGe Channel FinFETs,d and explained. The extrapolated degradation at EOL under use condition is estimated by the calibrated BAT framework and compared to the conventional regression based empirical methods. The error associated with the empirical methods is estimated.
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