书目名称 | Recent Advances in PMOS Negative Bias Temperature Instability | 副标题 | Characterization and | 编辑 | Souvik Mahapatra | 视频video | | 概述 | Covers characterization methods, modelling techniques, and impact of device architectures and processes.Establishes accurate modelling of measured degradation for wide variety of MOSFET architectures. | 图书封面 |  | 描述 | .This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: ..Ultra-fastmeasurements and modelling of parametric drift due to NBTI in differenttransistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs andGAA-SNS p-FETs, with Silicon and Silicon Germanium channels. . .BTIAnalysis Tool (BAT), a comprehensive physics-based framework, to model themeasured time kinetics of parametric drift during and after DC and ACstress, at different stress and recovery biases and temperature, as wellas pulse duty cycle and frequency. . .TheReaction Diffusion (RD) model is used for generated interface traps,Transient Trap Occupancy Model (TTOM) for charge occupancy of thegenerated inter | 出版日期 | Book 2022 | 关键词 | NBTI; MOSFET; FDSOI; FinFET; GAA-SNS FET; Si channel; SiGe channel; HKMG; Layout; Dimension Scaling; mechanica | 版次 | 1 | doi | https://doi.org/10.1007/978-981-16-6120-4 | isbn_softcover | 978-981-16-6122-8 | isbn_ebook | 978-981-16-6120-4 | copyright | Springer Nature Singapore Pte Ltd. 2022 |
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