Titlebook: Radiation Effects in Semiconductors and Semiconductor Devices; V. S. Vavilov,N. A. Ukhin Book 1977 Consultants Bureau, New York 1977 semic

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Radiation Effects in Semiconductors and Semiconductor Devices978-1-4684-9069-5

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Ionization in Semiconductors as a Result of the Stopping of Charged Particles, Absorption and Scatte great importance because of the conversion of the energy of those particles into light and electrical energy and because of the possiblity of using semiconductors for detection and determination of the type of radiation, and of the energy of charged particles (or of γ-rays) in dosimetry.

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Experimental Study of Radiation Defects in Semiconductors and Control of Semiconductor Properties by-induced defects. The problems of solid state physics which can be most conveniently studied in semiconductors include the threshold energy of defect production, and the generation and nature of simple and complex radiation damage.

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The Theory of the Formation and Nature of Radiation-Induced Defectsh-energy radiation on semiconductors have been carried out during the last fifteen years. Many of the investigations are concerned not only with general problems of semiconductor physics, but also with practical problems. An example of this is the study of the radiation stability of solar silicon cells used in space explorations.

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Radiation Effects in Semiconductor Diodesnditions. Accordingly, the radiation stability of diodes is sometimes determined by the degree of deformation of the forward V—I characteristics and sometimes by the changes in reverse characteristics. Therefore, in contrast to transistors, it is difficult to introduce a general criterion for the radiation stability of diodes.