Titlebook: Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors; From Materials to De Sourav Adhikary,Subhananda Chakrabarti Book 2018

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Summary and Future Work,served is the stability of PL peak of multilayer structure even after high temperature annealing. Then we have moved from materials to devices. We have used both InAs/GaAs and In(Ga)As/GaAs QD in the active layer of the multilayer heterostuctures. Improvement in device characteristics was also observed for the samples with ex-situ annealing.

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https://doi.org/10.1007/978-981-10-5290-3Photodetector; Quaternary capped; Detectivity in quantum dots; Annealing in quantum dots; Epitaxy in qua

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Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared PhotodetectorsFrom Materials to De

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Titlebook: Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors; From Materials to De Sourav Adhikary,Subhananda Chakrabarti Book 2018

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