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Titlebook: Oxide and Nitride Semiconductors; Processing, Properti Takafumi Yao,Soon-Ku Hong Book 2009 Springer-Verlag Berlin Heidelberg 2009 Epitaxy.L

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发表于 2025-3-21 20:01:07 | 显示全部楼层 |阅读模式
书目名称Oxide and Nitride Semiconductors
副标题Processing, Properti
编辑Takafumi Yao,Soon-Ku Hong
视频video
概述Covers the major developments in wide band gap semiconductors.Deals with the most important material for current applications, GaN, and future optoelectronic applications, ZnO.Integrates materials gro
丛书名称Advances in Materials Research
图书封面Titlebook: Oxide and Nitride Semiconductors; Processing, Properti Takafumi Yao,Soon-Ku Hong Book 2009 Springer-Verlag Berlin Heidelberg 2009 Epitaxy.L
描述.This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN. Materials properties, bulk growth, thin and thick films growth, control of polarity and application, nonpolar growth, structural defects, optical properties, electrical properties, nanostructures and the applications, and light emitters based on GaN and ZnO are treated succinctly. The unique format of touching both materials in each chapter enables this book to be very fresh, essential, and easy-to-access for readers who have interests in, and need getting more involved with, the most exciting compound semiconductors, ZnO and GaN.
出版日期Book 2009
关键词Epitaxy; Light emitting diode; Nanostructure; Nitride semiconductors; Oxide semiconductors; optical prope
版次1
doihttps://doi.org/10.1007/978-3-540-88847-5
isbn_softcover978-3-642-10029-1
isbn_ebook978-3-540-88847-5Series ISSN 1435-1889
issn_series 1435-1889
copyrightSpringer-Verlag Berlin Heidelberg 2009
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发表于 2025-3-21 22:04:27 | 显示全部楼层
Growth of Nonpolar GaN and ZnO Films,sis is on the typical features of growth, structural properties, and procedures to grow nonpolar films with improved crystal quality. The results of lateral epitaxial overgrowth of nonpolar GaN films are also discussed.
发表于 2025-3-22 00:32:05 | 显示全部楼层
ZnO and GaN Nanostructures and their Applications,thods or by processing. ZnO- and GaN-based nanostructures can successfully be used for fabrications of various sensors, transistors as well as for photonic device applications including light emitting diodes.
发表于 2025-3-22 05:38:26 | 显示全部楼层
Book 2009tures and the applications, and light emitters based on GaN and ZnO are treated succinctly. The unique format of touching both materials in each chapter enables this book to be very fresh, essential, and easy-to-access for readers who have interests in, and need getting more involved with, the most exciting compound semiconductors, ZnO and GaN.
发表于 2025-3-22 11:54:08 | 显示全部楼层
Structural Defects in GaN and ZnO,ensity have been reported. Detailed techniques including epitaxial lateral over growth and employment of buffers that lead to the growth of high quality films with a low dislocation density are discussed.
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Optical Properties of GaN and ZnO,res, the polarization selection rules can be obtained in simpler forms. Some recent reports will also be introduced stating that the anisotropic strain in nonpolar films plays an important role in deciding the polarization selectivity. The results of Raman spectroscopy are summarized in the end, wit
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