Titlebook: Optical Properties of Low Dimensional Silicon Structures; Daniel C. Bensahel,Leigh T. Canham,Stephano Ossici Book 1993 Kluwer Academic Pub

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Book 1993 inside the facilities of France Telecom- CNET. Around 45 leading scientists working on this rapidly moving field were in attendance. Principal support was provided by the Advanced Research Workshop Program of the North Atlantic Treaty Organisation (NATO). French Delegation a l‘Armement and CNET gav

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Electronic Charge Trapping Effects in Porous Silicon,porosity samples do not. This is interpreted in term of space charge effects on the p-Si surface that induce loss of surface passivation and, consequently, photoluminescence degradation. This finding can explain the measured electroluminescent properties of Schottky diodes formed by Au evaporation on p-Si.

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Optoelectronic Properties of Porous Silicon,s crystalline electronic structure. Our results provide direct evidences of the central assumption that visible luminescence of PS is based on surface-sensitive quantum confinement effects in Si nanocrystallites

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Voltage-Tunable Electroluminescence of Porous Silicon,A reversible spectral shift as large as 270 nm is obtained for a bias variation of 0.6 V. The comparaison of the EL spectrum with the photoluminescence (PL) signal suggests that the inhomogeneous luminescence of porous silicon is selectively excited by an electrical way.

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Scanning probe microscopies of luminescent porous silicon layers,.Texture is composed of grain of size compatible with quantum confinement effects.These nanostructures are found to be responsible for visible light emission and they are mapped together with the topography in the Low Energy Scanning Cathodoluminescence Microscope.

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