Titlebook: Optical Properties of III–V Semiconductors; The Influence of Mul Heinz Kalt Book 1996 Springer-Verlag Berlin Heidelberg 1996 electronic pro

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Introduction to Semiconductor Band Structures, and forbidden gaps in solids are described, and some basic ideas for the theoretical treatment of the band structure including consideration of the crystal symmetry are discussed. The specific features of the band structure in zincblende-type III–V semiconductors and some general properties of mult

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Excitons in Multi-Valley Semiconductors,s related to excitons in both bulk and low-dimensional semiconductors. We specially emphazise the situation in semiconductors close to the transition from a direct to an indirect-gap band structure. The dynamics of excitons in Al.Ga.As at the crossover point illustrate the consequences of such a mul

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Many-Body Effects in Multi-Valley Scenarios,ectrum and the electronic band structure. The reasons are screening — i.e., the collective response of the electron—hole system to interactions resulting from Coulomb and exchange effects — and the removal of oscillator strength by occupation of states in phase space. These many-particle effects are

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Summary and Outlook,s are well suited as model systems for such semiconductors, because the band-gap energies and the constellation of various conduction-band minima can be tuned over a wide range. The character of the fundamental gap can even be changed from direct to indirect, both in reciprocal and in real space. Th

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