Titlebook: Novel Silicon Based Technologies; R. A. Levy Book 1991 Springer Science+Business Media Dordrecht 1991 computer.crystal.electronics.epitaxy

宣称

Principles and Implementation of Artificial Neural Networks,ome classes of neural networks, however, is that they show a high degree of fault-tolerance and insensitivity to component variations. Unlike more traditional analog circuits, it may now prove feasible to bring the powerful methods of VLSI technology to bear on this class of circuits..This paper wil

虚构的东西

Book 1991photonic circuits, and artificial neural networks. This book begins by addressing the processing of electronic and optoelectronic devices produced by using lattice mismatched epitaxial GaAs films on Si. Two viable technologies are considered. In one, silicon is used as a passive substrate in order t

同义联想法

M. Van Rossum,J. De Boeck,M. De Potter,G. Borghsunsayable saying that without exhausting itself in the contents or themes of the utterance (the said), in the values it expresses, defies the order of communicative reason and the imperialism of the concept.

门闩

Alfred H. Van Ommenudies, the definition of “lo popular” has expanded and contracted throughout the last century; Jean Franco names its multiple valences, pointing to a broad spectrum of social spheres as diverse as mass culture, popular culture, folk culture, entertainment, media, communications, and the culture industry (5–6).

tooth-decay

inclusive

逢迎白雪

GaAs ON Si: Device Applications, of its thermomechanical superiority over bulk GaAs. The second application area aims at the functional combination of both GaAs and Si devices in a monolithic circuit. In both domains, significant technological achievements have been reported. Present results indicate that most GaAs-based devices c

减弱不好

套索

Ion Beam Processing of Chemical Vapor Deposited Silicon Layers,cture, or as an active region such as the gate electrode in a MOS structure. For this last application its advantages with respect to metals are related to its processing resistant characteristics and to the capability to shift the Fermi level by a suitable doping.

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Technology and Devices for Silicon Based Three-Dimensional Circuits,rther increase of integration density and performance of complex ICs. In this review firstly the technology of laser and electron beam recrystallization of SOI layers is discussed and the mechanism of large area single crystal SOI growth explained. The characteristics of SOI and bulk devices in mult