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Titlebook: Novel Silicon Based Technologies; R. A. Levy Book 1991 Springer Science+Business Media Dordrecht 1991 computer.crystal.electronics.epitaxy

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发表于 2025-3-21 17:19:59 | 显示全部楼层 |阅读模式
书目名称Novel Silicon Based Technologies
编辑R. A. Levy
视频video
丛书名称NATO Science Series E:
图书封面Titlebook: Novel Silicon Based Technologies;  R. A. Levy Book 1991 Springer Science+Business Media Dordrecht 1991 computer.crystal.electronics.epitaxy
描述Silicon, as an electronic substrate, has sparked a technological revolution that has allowed the realization of very large scale integration (VLSI) of circuits on a chip. These 6 fingernail-sized chips currently carry more than 10 components, consume low power, cost a few dollars, and are capable of performing data processing, numerical computations, and signal conditioning tasks at gigabit-per-second rates. Silicon, as a mechanical substrate, promises to spark another technological revolution that will allow computer chips to come with the eyes, ears, and even hands needed for closed-loop control systems. The silicon VLSI process technology which has been perfected over three decades can now be extended towards the production of novel structures such as epitaxially grown optoelectronic GaAs devices, buried layers for three dimensional integration, micromechanical mechanisms, integrated photonic circuits, and artificial neural networks. This book begins by addressing the processing of electronic and optoelectronic devices produced by using lattice mismatched epitaxial GaAs films on Si. Two viable technologies are considered. In one, silicon is used as a passive substrate in order t
出版日期Book 1991
关键词computer; crystal; electronics; epitaxy; material; metals; optoelectronics
版次1
doihttps://doi.org/10.1007/978-94-011-3430-9
isbn_softcover978-94-010-5517-8
isbn_ebook978-94-011-3430-9Series ISSN 0168-132X
issn_series 0168-132X
copyrightSpringer Science+Business Media Dordrecht 1991
The information of publication is updating

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发表于 2025-3-21 21:11:07 | 显示全部楼层
GaAs ON Si: Device Applications,an be processed and operated on GaAs/Si without dramatic loss of performance. A major exception is the semiconductor laser, which suffers from severe reliability problems. The implications of this situation for future developments of the GaAs/Si technology will be discussed.
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Ion Beam Synthesis in Silicon,antation. These examples provide two extreme cases with respect to the mass of the implanted ions the electrical and the crystallographical properties of the buried layers. In this way a good insight is provided in the unique possibilities of this rapidly developing technique.
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NATO Science Series E:http://image.papertrans.cn/n/image/668448.jpg
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https://doi.org/10.1007/978-94-011-3430-9computer; crystal; electronics; epitaxy; material; metals; optoelectronics
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Integrated Photonic Circuits on Silicon,This paper presents silicon based integrated optics technologies in the general optoelectronics context and through devices developed at LETI in different fields of applications including signal processing optical sensors and communication and optical memories.
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