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Titlebook: Negative Differential Resistance and Instabilities in 2-D Semiconductors; N. Balkan,B. K. Ridley,A. J. Vickers Book 1993 Springer Science+

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发表于 2025-3-21 16:16:11 | 显示全部楼层 |阅读模式
书目名称Negative Differential Resistance and Instabilities in 2-D Semiconductors
编辑N. Balkan,B. K. Ridley,A. J. Vickers
视频video
丛书名称NATO Science Series B:
图书封面Titlebook: Negative Differential Resistance and Instabilities in 2-D Semiconductors;  N. Balkan,B. K. Ridley,A. J. Vickers Book 1993 Springer Science+
描述Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and tech
出版日期Book 1993
关键词Energie; Semiconductor; electrons; logic; transistor
版次1
doihttps://doi.org/10.1007/978-1-4615-2822-7
isbn_softcover978-1-4613-6220-3
isbn_ebook978-1-4615-2822-7Series ISSN 0258-1221
issn_series 0258-1221
copyrightSpringer Science+Business Media New York 1993
The information of publication is updating

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发表于 2025-3-21 21:55:10 | 显示全部楼层
Negative Differential Resistance and Instabilities in 2-D Semiconductors
发表于 2025-3-22 04:03:36 | 显示全部楼层
Negative Differential Resistance: A Brief History and Review,arger than those observed in the alkali halides. It took the invention of the Zener diode for this theory to come into its own, though, ironically in its role as a switch, the breakdown, in practice, is frequently a consequence of avalanche rather than tunnelling. To compound the irony, pure Zener t
发表于 2025-3-22 04:55:02 | 显示全部楼层
Light Emitting Logic Devices Based on Real Space Transfer in Complementary InGaAs/InAlAs Heterostrutions as OR and NAND and is electrically reprogrammable between these functions. These powerful logic operations are demonstrated at room temperature..We also review recent theoretical studies of the symmetry properties of RST transistors. These studies, based on continuation modeling and transient
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发表于 2025-3-22 15:49:29 | 显示全部楼层
Negative Differential Resistance, Instabilities, and Current Filamentation in GaAs/AlxGa1-xAs Heteranche ionization leads to current filamention in the Al.Ga.As layer. In this way the parallel conduction of a modulation doped heterostructure becomes highly spatially inhomogeneous. We studied this behaviour by means of a novel technique which we developed for this purpose: the technique of time re
发表于 2025-3-22 17:56:49 | 显示全部楼层
Negative Differential Resistance, High Field Domains and Microwave Emission in , Multi-Quantum WellFurther experiments are required to determine the performance limits of these structures, but these results show the potential of such devices as high frequency components. In samples where breakdown occurs as a result of impact ionisation scanning electron microscope studies indicate the occurrence
发表于 2025-3-22 23:48:18 | 显示全部楼层
Book 1993understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and tech
发表于 2025-3-23 04:52:59 | 显示全部楼层
C. Canali,C. Tedesco,E. Zanoni,M. Manfredi,A. Paccagnellaprovides another dimension to current theoretical and policy debates about widening definitions and law around hate crime to include other groups beyond existing protected characteristics.978-3-030-86951-9978-3-030-86949-6Series ISSN 2947-6364 Series E-ISSN 2947-6372
发表于 2025-3-23 08:49:10 | 显示全部楼层
A. Straw,A. Da Cunha,N. Balkan,B. K. Ridleyprovides another dimension to current theoretical and policy debates about widening definitions and law around hate crime to include other groups beyond existing protected characteristics.978-3-030-86951-9978-3-030-86949-6Series ISSN 2947-6364 Series E-ISSN 2947-6372
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