Titlebook: Negative Differential Resistance and Instabilities in 2-D Semiconductors; N. Balkan,B. K. Ridley,A. J. Vickers Book 1993 Springer Science+

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High Frequency DC Induced Oscillations in 2D,AlGaAs MQW structures that exhibit this behaviour at low temperatures (<260K) and low applied electric fields (<1KV/cm). The frequency of the oscillations depends to some extent on the applied electric field but was generally approximately 15MHz. The magnitude of the electric field at which the osci

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Hot Electron Induced Impact Ionization and Light Emission in GaAs Based MESFETs, HEMTs, PM-HEMTs anght emission phenomena. Owing to their importance on advance device performances hot carrier effects have been investigated intensively both in Si and GaAs based devices. In fact the occurrence of impact ionization gives rise to multiplication and breakdown phenomena which limit the power handling c

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Negative Differential Resistance, High Field Domains and Microwave Emission in , Multi-Quantum Wellm wells. Negative differential resistance with accompanying oscillations in the current have been observed at room temperature, and are attributed to real space transfer or Г-L inter-valley transfer within the wells, the frequency of the oscillations is typically of the order of 1GHz. In samples, ex

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NDR, Hot Electron Instabilities and Light Emission in LDS,ey transfer., impurity barrier capture. and other esoteric mechanisms.. All these mechanisms give rise to voltage controlled NDR or, in reference to the shape of the current-voltage characteristic, n-type NDR. A second type is current controlled NDR, s-type, which is associated with impact ionisatio

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