Titlebook: Nanotechnology for Electronic Materials and Devices; Anatoli Korkin,Evgeni Gusev,Serge Luryi Book 2007 Springer-Verlag US 2007 CMOS.DRAM.e

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Silicon Nanocrystal Nonvolatile Memory,caling of floating-gate (FG) nonvolatile memory cells has been limited to bottom oxide thicknesses in the range of 80–110 Å primarily because of the vulnerability to charge loss from the conducting FG through isolated defects in the tunnel oxide that arise after repeated write/erase operations. As a

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Scanning Force Microscopies for Imaging and Characterization of Nanostructured Materials,ll as exciting prospects of new emerging technologies (quantum electronics, biochips, etc.) are prompting a huge interest in nanotechnology and the science of nanostructured materials. In particular, there is a need to develop efficient technologies for the preparation of surfaces with desired struc

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