Titlebook: Microscopy of Semiconducting Materials 2007; Proceedings of the 1 A. G. Cullis,P. A. Midgley Conference proceedings 20081st edition Springe

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Composite Substrates for GaN Growthansferred onto polycrystalline SiC. Those composite substrates can be prepared for 4” size and over as well. GaN layers are grown onto the above substrates in order to demonstrate that they can be used for the fabrication of GaN high electron mobility transistor (HEMT) devices. The epitaxial nitride

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An Initial Exploration of GaN Grown on a Ge-(111) Substratessisted molecular beam epitaxy (PAMBE) without any intermediate buffer layers. One defect, initially observed with optical microscopy, has a triangular shape in plan-view imaging and is essentially a faceted void in the Ge extending from the interface into the substrate. Another type of defect is th

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