Titlebook: Microelectronics, Circuits and Systems; Select Proceedings o Abhijit Biswas,Raghvendra Saxena,Debashis De Conference proceedings 2021 The E

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书目名称Microelectronics, Circuits and Systems影响因子(影响力)




书目名称Microelectronics, Circuits and Systems影响因子(影响力)学科排名




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书目名称Microelectronics, Circuits and Systems网络公开度学科排名




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书目名称Microelectronics, Circuits and Systems被引频次学科排名




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书目名称Microelectronics, Circuits and Systems读者反馈学科排名

烦忧

Impact of Channel Epilayer Induced Corner-Effect on the Sensing Performance of a Unique PTFET-Based esence of a corner due to the introduced epilayer, actually, comes to the aid of the proposed epi-pTFET-biosensor device by enhancing its detectability, compared to its equivalent conventional SOI pTFET sensor device by a great degree, yet maintaining significantly good sensitivity matrices throughout.

猛然一拉

Adrenal-Glands

Conference proceedings 2021 and techniques to match the theme of the conference. It will be a valuable resource for researchers, professionals, Ph.D. scholars, undergraduate and postgraduate students working in Electronics, Microelectronics, Electrical, and Computer Engineering..

大喘气

1876-1100 for researchers and practitioners.Highlights various applic.This book presents a collection of peer-reviewed articles from the 7th International Conference on Microelectronics, Circuits, and Systems – Micro 2020. The volume covers the latest development and emerging research topics of material scie

AMBI

Superior Performance of Gate Workfunction and Gate Dielectric Engineered Trapezoidal FinFET in the Peen solved by employing suitable boundary conditions. It is demonstrated that the device offers improved reliability in presence of trap charges and exhibits excellent immunity to short channel effects.

CRAB

Unified Analytical Model for Charge Density and Plasmonic Waves in the Quaternary AlInGaN/AlN/GaN He accumulation in quaternary alloys, as compared to ternary alloys such as AlGaN, the introduced plasmon oscillations have a higher frequency by almost an order. Our model gives an insight into exploring the quaternary alloy-based HEMTs for future THz applications.

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结束

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