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Titlebook: Low Dimensional Semiconductor Structures; Characterization, Mo Hilmi Ünlü,Norman J. M. Horing Book 2013 Springer-Verlag Berlin Heidelberg 2

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Advances in Low-Dimensional Semiconductor Structures,g atomic dimensions, have provided new opportunities for basic scientific studies and device applications. New fabrication technologies have also made it possible to reduce device dimensions to the point where quantum size effects must be considered in order to realistically describe the device oper
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Friedel Sum Rule in One- and Quasi-One-Dimensional Wires,rticular, we analyze the relation between the density of states (DOS) obtained from the energy derivative of the Friedel phase (or the scattering matrix) and that obtained from the Green’s function. We show that the local FSR is valid when a correction term is included. Various properties of the one
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Functionalization of Graphene Nanoribbons,f these structures and show that superlattices with armchair edge shapes can be used as resonant tunneling devices and those with zigzag edge shape have unique features for spintronic applications. We also discuss another route of functionalizing 2D graphene, 1D GNR, and superlattices with 3d-transition metal (TM) atom adsorption.
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Fabrication of Low Dimensional Nanowire-Based Devices using Dieletrophoresis,aration from . to 50–100 nm. The alignment yield of . Au–Ag–Au striped nanowires across gold electrodes was as high as 70%. The nanowires-based device was employed to the capture and electrical characterization of preferably a single 100 nm Au nanosphere in the nanogap.
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