Titlebook: Light-Emitting Diodes; Materials, Processes Jinmin Li,G. Q. Zhang Book 2019 Springer International Publishing AG, part of Springer Nature 2

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GaN LEDs on Si Substrate,ve region, high-efficiency LED structure is developed. The chip fabrication process of LED on Si substrate is totally different from that on sapphire substrate that yields a vertical thin film device structure which has many unique features.

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The AlGaInP/AlGaAs Material System and Red/Yellow LED,istributed Bragg reflectors (DBRs), transparent-substrate LEDs (TS-LEDs), thin-film LEDs (TF-LEDs), and GaP window/current-spreading layer. AlGaInP/AlGaAs material MOCVD epitaxy and LED chip processing technology were introduced briefly.

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,GaN Substrate Material for III–V Semiconductor Epitaxy Growth,h-frequency electronics accelerates the research, development, and commercial production of GaN substrate materials. GaN substrate with low defect density will be conducive to improve the performance and lifetime of the devices, leading to significant progress in the development of several optoelect

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Homoepitaxy of GaN Light-Emitting Diodes,e lighting (US Department of Energy, Solid-State Lighting Program, .; Basic Research Needs or Solid-State Lighting, Report of the Basic Energy Sciences Workshop on Solid-State Lighting, May 22–24, 2006. .). As a direct bandgap material, alloys of Ga.In.N can be tuned to emit light covering every por

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GaN LEDs on Si Substrate,thermal expansion coefficient between GaN and Si. With the help of substrate patterning and AlN/AlGaN buffer layer technologies, stress can be well controlled and high-quality crack-free GaN with low dislocation density are successfully grown. By strain engineering and utilizing V-defect in the acti

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