Titlebook: Light Scattering in Semiconductor Structures and Superlattices; David J. Lockwood,Jeff F. Young Book 1991 Springer Science+Business Media

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Interaction of Light with Acoustic Waves in Superlattices and Related Devices be easily transposed to the problem of light diffraction by ultrasounds in these microstructures . The use of ultrasonic waves (as compared with acoustic phonons of the light-scattering experiments) allows a flexibility by far larger, and the interaction efficiencies are much higher, since one can

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Optical Phonon Raman Scattering as a Local Probe of Si-Ge Strained Layersity, layer thickness control at the monolayer level, atomically abrupt interfaces between the layers and excellent crystalline quality are aL.L. required. These requirements and the general scientific interest in the physics and chemistry of the strained Si-Ge system have placed a significant premiu

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CREEK

The Raman Line Shape of Semiconductor Nanocrystalse interpretation of the spectrum is given, with emphasis on stress/strain, electromagnetic resonances for isolated grains, absorption effects in mixed phase films, surface or interface vibrations, and crystallinity of the film.

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Raman Scattering of III-V and II-VI Semiconductor Microstructures-V or Silicon substrates which have the inherent potential for large scale integration with present technology. Here we report some of our work on the characterization of fabrication processes by Raman scattering.

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Towards Two Dimensional Micro-Raman Analysis of Semiconductor Materials and Devicesoratories we have been working towards the development of a Micro-Raman scattering system that will be capable of producing such two dimensional information on a microscopic scale..The progress achieved to date will be reported, and some preliminary results reporting the use of the system to map out

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