Titlebook: Lateral Power Transistors in Integrated Circuits; Tobias Erlbacher Book 2014 Springer International Publishing Switzerland 2014 Charge Com

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Tobias Erlbachercontext of psychoanalysis. If adolescence—which one might identify with Anna, who is interested in it, who sees adolescent patients—is a stepchild in psychoanalysis, what does that make her, the apparently dutiful daughter? Is there a complaint about a lack of status lodged in that word? Can you be

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1612-1287 . Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices..In the last part, [..] t978-3-319-34520-8978-3-319-00500-3Series ISSN 1612-1287 Series E-ISSN 1860-4676

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Power Electronic and RF Amplifier Circuits,irements down to the circuit and device level. Power electronic systems using integrated circuits are enabled by circuitry for energy conversion and control. Here, switch mode converters provide high efficiency, simple topology and high power densities satisfying the requirements set by the applicat

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Lateral Power Transistors with Charge Compensation Patterns,ation patterns have been successfully introduced in vertical superjunction MOSFETs [.]. A transfer of this topology to lateral power MOSFETs appears intriguing due to the reduction of drift resistance further beyond the one-dimensional silicon limit. Using a unit cell for lateral power MOSFETs, the

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Lateral Power Transistors with Trench Patterns,rench-based technology in LDMOS transistors is reviewed. First, the applicability of trench gates is motivated by a discussion on channel resistance. The impact of FinFET technology on lateral power transistors is investigated. To evaluate the feasibility of trench gates, device designs employing tr

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Lateral Power Transistors on Wide Bandgap Semiconductors,ysical properties on electrical characteristics is explained and the benefits regarding power electronic and radio-frequency applications are discussed. Technological limitations like limited channel mobility due to high interface state densities will be considered. Both work towards high frequency

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