Titlebook: Laser Optics of Condensed Matter; Volume 2 The Physics Elsa Garmire,Alexei A. Maradudin (Chairman),Karl K Book 1991 Springer Science+Busine

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Studies of Semiconductor Surfaces and Interfaces by Three-Wave Mixing Spectroscopyronic transitions at the insulator/semiconductor interface formed by CaF./Si(111). These measurements led to a determination of the “interface” band gap, i.e. the minimum energy separation between filled and empty interface states. The interface band gap is found to differ strongly from that of eith

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Time-Resolved Resonant Reflection of Light appear in a linear reflection process and are treated apart from nonlinear cases where . itself is modified by a strong (additional) incident field. We prefer to call the latter case transient reflectivity and to use the term transient reflection to denote linear response.

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Book 1991s" (New York, 1979), and "Laser Optics of Condensed Matter" (Leningrad, 1987). These meetings were evaluated by the participants as highly successful and provided invaluable oppor­ tunities for researchers to exchange information and to initiate colla­ borative work which led to research visits by U

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Quasielastic Electronic Light Scattering in Semiconductors at Low Concentrations of Current Carriers. cm., when the condition for strong screening holds . where r. is the electron screening radius. Light scattering is possible in this case only due to special mechanisms providing the neutrality condition. Quasielastic light scattering spectra have a Lorentzian shape which indicates the diffusive motion of carriers in heavily doped materials..

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