Titlebook: Kinetics of Ordering and Growth at Surfaces; Max G. Lagally Book 1990 Plenum Press, New York 1990 Surface science.crystal.kinetics

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书目名称Kinetics of Ordering and Growth at Surfaces影响因子(影响力)




书目名称Kinetics of Ordering and Growth at Surfaces影响因子(影响力)学科排名




书目名称Kinetics of Ordering and Growth at Surfaces网络公开度




书目名称Kinetics of Ordering and Growth at Surfaces网络公开度学科排名




书目名称Kinetics of Ordering and Growth at Surfaces被引频次




书目名称Kinetics of Ordering and Growth at Surfaces被引频次学科排名




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书目名称Kinetics of Ordering and Growth at Surfaces年度引用学科排名




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书目名称Kinetics of Ordering and Growth at Surfaces读者反馈学科排名

Antioxidant

wreathe

Structure and Ordering of Metal Overlayers on Si(111) and Ge(111) Surfaces.Au on Si (111) is known to have a 5×1 structure saturating at about 0.4 ML, a √3 structure at 1 ML and a 6×6 at 1.5 ML. We have performed x-ray diffraction studies of all three structures and will discuss the structural analysis and the complications arising from disorder.

CRUC

Si Molecular Beam Epitaxy: A Comparison of Scanning Tunneling Microscopy Observations with Computer h biatomic steps. For higher coverages island formation is observed..These observations have been compared with Monte Carlo computer simulations, and the characteristic activation energies involved have been deduced.

Postmenopause

florid

Direct Epitaxial Growth of Quantum Structures with two and Three-Dimensional Carrier Confinementth template; their growth requires additionally a self organization of the epitaxy. The CSL could be used for the direct growth of quantum box superlattices. The TSL have been used to produce quantum wire superlattices. Their unique optical properties are a direct consequence of two dimensional carrier confinement.

GRACE

Growth and Ordering of Ag Submonoiayers on Ge(111)the faceting due to heating of a misoriented Ge(111) with submonolayers of Ag is studied in the same way. It is shown that quantitative analysis of growth and ordering is now possible for inhomogeneous surfaces as done so far with homogeneous surfaces.

柏树

Microscopic Aspects of the Initial Stages of Epitaxial Growth: A Scanning Tunneling Microscopy Studymicroscopy measurements of the ordering and growth of Si on Si(001) are used to illustrate these mechanisms. Diffusion coefficients, growth anisotropy and lateral accommodation coefficients, equilibrium island shapes and free energies, edge desorption energies, and diffusional anisotropy are discussed.

recede

Genetics