Titlebook: Ion Implantation in Semiconductors 1976; Fred Chernow,James A. Borders,David K. Brice Book 1977 Plenum Press, New York 1977 Plantation.cor

DOSE

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High Dose Implantation of Au and Cu into Si Studied by Auger Electron and Backscattering SpectroscopMetastable metallic Si-Au and -Cu alloys were formed at room temperature by high dose implantation(60KeV: .10. ions/cm.) of Au and Cu into Si single crystals. The alloy phases were identified by Auger Electron Spectroscopy(AES).

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https://doi.org/10.1007/978-1-4613-4196-3Plantation; corrosion; crystal; diffusion; electron; electron microscope; electron microscopy; hydrogen; mic

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充足

Some Structural and Electrical Characteristics of GaAs Annealed after Implantation with Be, Mg, Zn, ence of 10. ions/cm.. The defect structures in the as-implanted and as-annealed states were examined using transmission electron microscopy techniques. The differences in the electrical properties of the specimens implanted with different ions are discussed in relation to the differences in the observed defect structures for the various samples.

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Constant

Sheet Resistivity and Hall Effect Measurements of Aluminium Implanted Silicon and Silicon Films on S.. The annealing behaviour of the implanted layers was studied by sheet resistivity and Hall effect measurements. The annealing was performed in the temperature range 300 to 800°C. As a rule the sheet resistivity was found to be higher for aluminium implantations in silicon on sapphire than correspo