Titlebook: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon; Peter Pichler Book 2004 Springer-Verlag Wien 2004 Semiconductor.accep

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书目名称Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon影响因子(影响力)




书目名称Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon影响因子(影响力)学科排名




书目名称Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon网络公开度




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Isovalent Impurities, not have sufficed for a presentation of silicon-germanium materials in general. Tin, the last isovalent impurity considered here, has already limited technical applications. However, it was studied to investigate basic diffusion processes in silicon. The main results will be presented in Section 4.3.

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Halogens,ects were also mentioned in the literature. In addition, fluorine was found to enhance oxide growth and to reduce the associated generation of self-interstitials. Its presence at silicon/silicon dioxide interfaces was associated with a variety of advantages while fluorine in the bulk of oxides may have detrimental effects.

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Book 2004rst comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and sp

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Chalcogens,, and tellurium, were found to show the expected double-donor properties. They were also found to be very similar, showing a tendency to form pairs which also act as double donors. A comprehensive review of their properties was given by Grimmeiss and Janzén [.]. For the sake of space, only the most important facts can be recapitulated here.

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