Titlebook: Intersubband Transitions in Quantum Wells: Physics and Devices; Sheng S. Li,Yan-Kuin Su Book 1998 Springer Science+Business Media New York

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Intersubband Electroluminescence from GaAs/AIGaAs Triple Barrier and Quantum Cascade Structuresfrom GaAs/AlGaAs-based quantum cascade structures. Intersubband emission (λ≈8.5μm) with a full width at half maximum of 7meV, was observed from a GaAs/AlGaAs triple barrier structure with quantum well widths of 66Å and 33Å. The emission was coupled out of the sample by a metallic grating with a peri

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Quantum Well Infrared Photodetectors: Device Physics and Light Couplingtron across the bandgap (Eg) from the valence band to the conduction. These photo-electrons can be collected efficiently, thereby producing a photocurrent in the external circuit. Since the incoming photon has to promote an electron from the valence band to the conduction band, the energy of the pho

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QWIP Performance and Polarization Selection Rulemine the performance of QWIP, and point to the direction for future work to improve the performance. Analytical expressions for detectivity and background limited operating temperature are given. This enables a easy identification of key parameters and their relations to the performance characterist

JOG

Electric Field Distribution and Low Power Nonlinear Photo-Response of Quantum Well Infrared Photodet accumulation of space charges in the quantum wells is the origin of the inhomogeneous electric field distribution across the QWIP. Under steady state conditions the QWIP can be divided into a high field region of the first few quantum wells near the emitter and an asymptotic region with a constant

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Intersubband Transitions of Normal Incidence N-Type Direct Band Gap Quantum Well Structures(invited)t very useful in quantum well infrared photodetectors (QWIPs). On the other hand, normal incidence absorption is allowed in both p-type QWIPs and indirect bandgap n-QWIPs. However, the low electron effective mass and high electron mobility in the Г valley of the conduction band made n-type QWIPs mor

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Calculation and Photoresponse Measurements of the Long-Wavelength IR Absorption in P-Type GaAs/AlGaA and InAs/InGaSb superlattice (SL) infrared (IR) detector structures. The electronic structure and the optical absorption of these structures are calculated as a function of their structural and material parameters using a newly developed 8x8 envelope-function approximation (EFA) formalism. Based on

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Optical Response Induced by Intersubband Transitions in Quantum Wells: The Role of Multiple Reflectiction (.) [7]. Therefore, the total internal reflection geometry is very often used to enhance the coupling of the infrared radiation with intersubband excitations in the single quantum well (SQW) [2] and multiple quantum well (MQW) [7] structures. Practically, in all papers using this coupling tech

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Lateral Physical Effects in Quantum Well Infrared Photodetectorser detector area are considered. These effects are due to the in-plane transport of the photoinduced charge in the QW and resulting broad injection from the emitter. Characteristic length of the lateral photocurrent spreading can be as large as 10.–10. μm. Analytical expressions for SQWIP responsivi