Titlebook: Intersubband Transitions in Quantum Wells; Emmanuel Rosencher,Børge Vinter,Barry Levine Book 1992 Springer Science+Business Media New York

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Intersubband Transition and Electron Transport in Potential-Inserted Quantum Well Structures and theki and Esaki[1] and later reinvented by Smith and Yariv[2]. As shown in Fig.1, this scheme makes use of the vertical electron transport in a particular miniband structure, where electrons tightly bound in the very narrow ground miniband are photoexcited to an upper miniband of finite width and give

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Photovoltaic Intersubband Photodetectors Using GaAs Quantum Wells Confined by AlAs Tunnel Barriers. and, more recently, novel infrared imaging cameras:. There has also been an increasing interest in intersubband photodetection in the 3-5 μm regime, first realized in the In.Ga.Asfin.A1.As system.. In the case of GaAs MQW structures, this wavelength range is only accessible for indirect-gap Al.Ga.

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Application of Multiple-Quantum-Well Infrared Detectors to Present and Future Infrared Sensor System interest in such devices as alternatives to current infrared (IR) detectors made from InSb, HgCdTe, and extrinsic Si for use in IR sensor systems. Because the performance of available IR focal planes is limited by detector array uniformity, operability, and cost, the advantages of staring systems f

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Electron Transfer Infrared Modulator (ETIM)g of a wide well and a narrow well, whose intersubband transitions are at different wavelengths. Under electric field, tunneling is used to transfer the electrons within the two coupled wells and therefore change the absorption wavelength. The absorption spectra of the ETIM at different biases show

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Far-Infrared Emission and Absorption Spectroscopy of Quantum Wells and Superlatticesetween electronic subbands. Since the first observation of intersubband absorption in a quantum well was reported. in 1985, there has been steadily growing interest in the detailed physical properties of intersubband transitions as well as in possible applications in various areas of electro-optics

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Room-Temperature Photo-Induced Intersubband Absorption in GaAs/AlGaAs Quantum Wellsowing to their very large oscillator strengths .. Intersubband devices like photodetectors ., optical modulators based on a Stark-shift of the subband energies ., second-harmonic converters . or optical rectifiers . have been demonstrated. However, for all these devices, n-doping of the quantum well