Titlebook: Integrated Optoelectronics; Waveguide Optics, Ph Karl Joachim Ebeling Book 19931st edition Springer-Verlag Berlin Heidelberg 1993 Integrier

LIMIT

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Strip Waveguides,ndex of the film non-homogeneous, as in Fig. 4.1. A central strip with high index .. is bordered by material with smaller indices .., ..(.. > .., ..). This has the result that total reflection can also take place at the lateral interfaces (between .. and .., .. ) and thus form guided modes. The anal

Militia

Coupling of Modes,perposition of two propagating modes . and . of the same frequency can be written as.where . and . are complex amplitudes, and the plus and minus signs denote backward and forward travelling waves. If the waveguide has perturbations which lead to a refractive index profile dependent on ., there is s

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Emission and Absorption,ulated emission processes turn out to be of special interest. Here radiation induces electron transitions from a high energy level to a lower level, the energy levels being separated by the energy of the emitted photon. The emitted photon is in phase with the exciting radiation and the wave may be a

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Heterojunctions,on type (n-n, p-p) from junctions of different type (p-n). In the ideal case we have an abrupt junction between the materials. In practice junctions may occur within a few (2 or 3) atomic layers. With lattice mismatching (> 0.1%) of the two semiconductors defects are formed at the interface, which l

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Laser Diodes,rs can be accumulated at double heterostructure pn-junctions. All these effects play a part in the construction of laser diodes. We shall discuss first the general properties of lasers, then enter into the special construction of laser diodes and discuss some of their characteristic properties.

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