Titlebook: Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors; Volume 1, Materials Ghenadii Korotcenkov Book 2023 The Editor(s) (i

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Ternary II-VI Alloys Promising for Application in Photodetectorsocusing on the applications in photodetectors. In this context, we investigate the solid-state physics of a photovoltaic device to provide a foundation to explain various considerations of manufacturing an II-VI-based photodetector and electronic properties that influence the photodetection efficien

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II-VI Semiconductors Bandgap Engineering, lasers, etc. due to their wide range of bandgap. II-VI binary semiconductors have a direct bandgap and exhibit good photoluminescence (PL) properties. The PL emission peaks when it comes to ternary alloys can be gradually shifted under controlled stoichiometry. The II-VI semiconductors cover the f

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Electronic Structure of Mercury Chalcogenides Nanocrystalslding block of optoelectronics, especially as phosphors for displays. Due to the narrow band gap of the bulk, mercury chalcogenides have achieved broad tunability from the visible to the THz range. Though derived from the bulk mercury chalcogenides band structure, the electronic structure of nanocry

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Quantum Dot (QD)-Induced Toxicity and Biocompatibilityeir prominent optoelectronic properties for biomedical applications that have been extensively researched. Due to their unique properties and applications in nanoscience and nanotechnology as phosphors, sensors, and optoelectronic devices, group II–VI semiconductors have been extensively reported in

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Features of Single-Crystal Growth of CdTe and Cd1-xZnxTe Compounds Designed for Radiation Detectorsgle crystals and the reasons for the difficulties in obtaining large-diameter single crystals of spectrometric quality are described. An analysis of the synthesis methods used for growing CdTe and Cd.Zn.Te single crystals is given, and the achievements in this field are discussed. Companies that are

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Thin Films of Wide Band Gap II-VI Semiconductor Compounds: Features of Preparations for modern optoelectronic devices and production of chemical sensors. Special attention is paid to such methods as vacuum thermal deposition and its varieties which differ in ways of sputtering of the precursor material, magnetron sputtering, chemical vapor deposition, epitaxial deposition, ion be

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Synthesis of II-VI Semiconductor Nanocrystalsmechanochemical method, hydrothermal and solvothermal techniques, sol–gel processing, sonochemical method, microemulsion technique, microwave‑assisted method, hot-injection and one-step colloidal methods, photochemical synthesis, and green synthesis. The mechanisms and main regularities observed dur

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