Titlebook: HFI/NQI 2004; Proceedings of the 1 K. Maier,R. Vianden Conference proceedings 2005 Springer-Verlag Berlin Heidelberg 2005 Hyperfine interac

极深

probate

流动才波动

Impurity-Vacancy Complexes in Si and Gend 4sp series form distorted substitutional complexes (except Al, which forms a split complex in Si). This trend strongly correlates with the lattice relaxations of nearest neighbors around the isolated (without vacancy) substitutional impurities.

Locale

Electric Field Gradients at Hf and Fe Sites in Hf2Fe Recalculatedtively, are in excellent agreement with experimental data (23.4×10. V/m. and 2.7×10. V/m.), better than those reported in earlier calculations. The calculated EFG for Hf 16c position (4.2×10. V/m.) is stronger than the experimental one (1.1×10. V/m.).

抱狗不敢前

ind this volume indispensable. New and original scientific results along with recent developments in instrumentation and methods will be communicated in invited and contributed papers..978-3-540-30924-6

Mirage

漂浮

接触

garrulous

The Electric Field Gradient of 111Ag in Macrocyclic Crown Thioethers0S6-OH)[CF.SO.]. The density functional theory calculations have been performed with the Amsterdam Density Functional code ADF. A “fingerprint system” is introduced, which allows to assign electric field gradients to certain Ag coordinations in these crown thioether complexes.

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