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Titlebook: HEMT Technology and Applications; Trupti Ranjan Lenka,Hieu Pham Trung Nguyen Book 2023 The Editor(s) (if applicable) and The Author(s), un

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楼主: Philanthropist
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Linearity Analysis of AlN/,-Ga,O, HEMT for RFIC Design,r input intercept point (IIP.), third-order intermodulation distortion (IMD.), and gain-transconductance frequency product (GTFP) are computed to predict the linearity performance and minimize intermodulation distortion. The present analysis is beneficial for optimizing the device bias point required for RFIC design.
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2731-4200 in GaN HEMT and Ga2O3 HEMT.Presents basic operation princip.This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book pres
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HEMT Technology and Applications978-981-19-2165-0Series ISSN 2731-4200 Series E-ISSN 2731-4219
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