| 书目名称 | HEMT Technology and Applications | | 编辑 | Trupti Ranjan Lenka,Hieu Pham Trung Nguyen | | 视频video | | | 概述 | Emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design.Covers two broad domains such as state-of-the-art research in GaN HEMT and Ga2O3 HEMT.Presents basic operation princip | | 丛书名称 | Springer Tracts in Electrical and Electronics Engineering | | 图书封面 |  | | 描述 | .This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.. | | 出版日期 | Book 2023 | | 关键词 | HEMT; HFET; GaAs Technology; GaN Technology; Ga2O3 Technology; Nanoelectronics; High Frequency; Power Elect | | 版次 | 1 | | doi | https://doi.org/10.1007/978-981-19-2165-0 | | isbn_softcover | 978-981-19-2167-4 | | isbn_ebook | 978-981-19-2165-0Series ISSN 2731-4200 Series E-ISSN 2731-4219 | | issn_series | 2731-4200 | | copyright | The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Singapor |
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发表于 2025-3-21 17:06:10
