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书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets影响因子(影响力)




书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets影响因子(影响力)学科排名




书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets网络公开度




书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets网络公开度学科排名




书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets被引频次




书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets被引频次学科排名




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书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets年度引用学科排名




书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets读者反馈




书目名称Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets读者反馈学科排名

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Politics and the History CurriculumIn this chapter, the scavenging concept is analyzed. As it was commented in the introduction, Kim et al. [1] explored this effect for the first time with the aim of reducing the SiO. layer that growth at the high κ/silicon interface.

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Introduction,The integrated circuits (ICs) based on complementary metal-oxide-semiconductor (CMOS) devices are currently the dominant technology in the microelectronic industry. Its success is based on the low static power consumption and its high integration density.

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Characterization Techniques,The study of the semiconductor/high κ interface and the properties of the dielectric film, grown using the fabrication techniques described in the former chapter, are one of the main objectives of this thesis.