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https://doi.org/10.1007/978-94-009-7488-3fabricate miniature lasers [1, 2]. A method was developed for preparation of REP as single crystals from highly concentrated aqueous solutions of phosphoric acids at 300–700°C [1–6]. Yoshimura et al. [7] classify growth of REP single crystals under these conditions as a hydrothermal method, although
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Structural and Phase Transformations in Films Deposited Using Laser Plasmagree of supersaturation, deposition rate, thermal regime, and vapor phase composition. Pulsed laser film deposition is very effective in this area since ultrapure conditions of vacuum preparation can be achieved and high temperatures, vaporization of high-melting materials, and high deposition rates
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Melting and Crystallization of Semiconductors Using Pulsed Lasersdamental works on laser annealing of ion-implanted layers [1] and concluding with attempts at direct control of growth in the most contemporary variants of epitaxial technology. The physics of processes occurring during the pulse have been studied for a number of years while the search for specific
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Solid-State Transformations Induced by Boundary Migrationsll specifics of low-temperature formation of new phases in such systems are related to the decisive role of diffusion along grain boundaries. The bulk density of these grains in finely crystalline systems formed under conditions of highly disrupted equilibrium is 3–4 orders of magnitude higher than
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