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Block Formation and Crystallographic Orientation Changes During Growth of Shaped Sapphire Single Crsts if the crystal grows ideally enough. However, crystals often contain structural defects such as dislocations and their pileups, slip bands, and intergrain boundaries. Each of these defects is connected with a certain distortion of the crystal lattice. As a result, the orientation of the grown cr

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Revised Phase Diagrams of LiF-RF3 (R = La-Lu, Y) Systems,on of LiRF. single crystals and lithium yttrium fluoride (LYF) in quantum electronics [1, 2]. This family contains members that exhibit excellent processing characteristics in addition to a high capacity for isomorphous replacement by trivalent REE ions. These characteristics include, among others,

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Theories of Political Disobedience,ution in thin layers of binary semiconductors result from specific features of the incorporation of host and impurity atoms at kink sites. In particular, statistical correlations between elementary events occurring at step kinks may play an important role in the growth of semiconductor materials by

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https://doi.org/10.1007/978-3-319-64556-8e misfit parameters are relieved [1]. These stresses are related to the fact that the Burgers vectors of similar misfit dislocations (MDs) have screw components [2, 3]. The LSSs can influence the microstructure of the epitaxial layer and should be considered when choosing the growth conditions. The