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书目名称Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations影响因子(影响力)




书目名称Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations影响因子(影响力)学科排名




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https://doi.org/10.1007/978-3-8348-8242-4aturation can be achieved by hydrogenation using HF-etching, which is possible due to the polarization of the Si–Si backbone if F-terminated at the surface. Hydrogen-terminated silicon nanoparticles are thermally very stable if the hydrogen coverage is more than 50 %. Hydrogenated silicon nanostruct

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学术讨论会

Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

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https://doi.org/10.1007/978-3-642-95345-3ructures including silicon nanotubes have also been intensive. Distinguishing computational work has been done by us on the growth mechanism, surface properties, excited state properties, and energy band engineering of silicon nanostructures. Our studies are expected to promote the development of silicon-based nanoscience and nanotechnology.

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Introduction,ructures including silicon nanotubes have also been intensive. Distinguishing computational work has been done by us on the growth mechanism, surface properties, excited state properties, and energy band engineering of silicon nanostructures. Our studies are expected to promote the development of silicon-based nanoscience and nanotechnology.

apropos

Growth Mechanism of Silicon Nanowires,o grow and form sp. cores after a critical size. The high possibility and crystallographic dependence of oxygen diffusion allow the so-formed silicon nanostructures grow along certain growth directions (<110> and <112>).

即席演说

Grundlegende Begriffe und Analyseprofile,, including 0D silicon quantum dots, 1D silicon nanowires, and 2D silicon sheet, for their growth mechanism, structural stability, chemical stability, excited state property, and energy band structure engineering.