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书目名称Grain Boundary Controlled Properties of Fine Ceramics影响因子(影响力)




书目名称Grain Boundary Controlled Properties of Fine Ceramics影响因子(影响力)学科排名




书目名称Grain Boundary Controlled Properties of Fine Ceramics网络公开度




书目名称Grain Boundary Controlled Properties of Fine Ceramics网络公开度学科排名




书目名称Grain Boundary Controlled Properties of Fine Ceramics被引频次




书目名称Grain Boundary Controlled Properties of Fine Ceramics被引频次学科排名




书目名称Grain Boundary Controlled Properties of Fine Ceramics年度引用




书目名称Grain Boundary Controlled Properties of Fine Ceramics年度引用学科排名




书目名称Grain Boundary Controlled Properties of Fine Ceramics读者反馈




书目名称Grain Boundary Controlled Properties of Fine Ceramics读者反馈学科排名

含沙射影

Phagozyten und antigenpräsentierende Zellenrature and 1070 K. Crack deflection and healing at grain boundaries were observed at 1070 K. Dislocations were generated at crack tips in grains at both temperatures. The strain contour line around the crack tips periodically oscillated during crack propagation, which was explained by the generation of periodic dislocations.

催眠

Morphine

GEN

Armada

Discontinuous Grain Growth and the Grain Boundary in a Solid-Solid Reaction Growth Method for Ferrits of joining a polycrystal with a single crystal seed and heating the joined body. Homogeneous single crystals are obtained readily. In this method, it is very important to control grain boundary phenomena such as discontinuous grain growth, grain size, pores, and impurities. In this paper, the rela

Armada

Thermal Properties of AlN Sintered at Lower Temperature with Additiveseramics at lower temperature for energy conservation. Sintering additives, such as CaO, CaF., Y.O., and YF., are essential components for the densification of A1N and to obtain higher thermal conductivity. Y.O. and YF. were investigated as sintering additives at 1600 °C and 1800 °C. The additives YF

SHOCK

Recent Developments in Understanding Grain-Boundary Electric and Dielectric Properties of PTCR Bariu conductance. In the current-voltage (IV) study, the electrodes showed a linear IV behavior at low voltages and an exponential type of diode behavior at high voltages. This IV characteristic could be explained by an equivalent circuit which had a restrictive resistance (ohmic contact) in parallel wi

BADGE

Grain Boundary Properties of Oxygen Hot Isostatically Pressed Barium Strontium Titanate with Positivd Ba.Sr.TiO. was examined. Although no significant microstructural or density changes could be observed as a consequence of the O.-HIP annealing, the electrical resistivity characteristics changed markedly. The maximum resistivity was increased about 160 times and the temperature of maximum resistiv

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