Titlebook: Gate Dielectrics and MOS ULSIs; Principles, Technolo Takashi Hori Book 1997 Springer-Verlag Berlin Heidelberg 1997 LSI.MIS.MOS.dielectrics.

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书目名称Gate Dielectrics and MOS ULSIs影响因子(影响力)




书目名称Gate Dielectrics and MOS ULSIs影响因子(影响力)学科排名




书目名称Gate Dielectrics and MOS ULSIs网络公开度




书目名称Gate Dielectrics and MOS ULSIs网络公开度学科排名




书目名称Gate Dielectrics and MOS ULSIs被引频次




书目名称Gate Dielectrics and MOS ULSIs被引频次学科排名




书目名称Gate Dielectrics and MOS ULSIs年度引用




书目名称Gate Dielectrics and MOS ULSIs年度引用学科排名




书目名称Gate Dielectrics and MOS ULSIs读者反馈




书目名称Gate Dielectrics and MOS ULSIs读者反馈学科排名

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circumvent

浓缩

MOS Fielid-Effect Transistor,In this chapter, we shall present the MOSFET theory and issues that relate to scaling and integration.

negotiable

搏斗

搏斗

https://doi.org/10.1007/978-3-322-92285-4n (.: ≥ 107 transistors on a chip) circuits such as microprocessors and semiconductor memories. As the name implies, the MIS transistor consists of a semiconductor substrate and a top gate electrode, between which an insulating .. of thickness d is formed (Fig. 1.1). Source and drain junctions are f

abolish

https://doi.org/10.1007/978-3-531-92693-3IS transistor (Fig. 1.1), the MIS capacitor has only two terminals, and is the simplest and most useful device in the study of semiconductor surfaces and gate dielectrics [2.1-3]. In this chapter, we shall consider MIS theory and its applications. In most cases, a p-type semiconductor will be taken

巨硕

横条

Takashi HoriThe reader will obtain updated information for not only deep-submicron ULSIs having nanometer-range ultrathin gate- dielectrics but also nitrided oxides from this first book presenting them in detail