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Titlebook: Gaseous Dielectrics VI; Loucas G. Christophorou,Isidor Sauers Book 1991 Springer Science+Business Media New York 1991 Germany.Potential.de

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书目名称Gaseous Dielectrics VI
编辑Loucas G. Christophorou,Isidor Sauers
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图书封面Titlebook: Gaseous Dielectrics VI;  Loucas G. Christophorou,Isidor Sauers Book 1991 Springer Science+Business Media New York 1991 Germany.Potential.de
描述The Sixth International Symposium on Gaseous Dielectrics was held in Knoxville, Tennessee, U.S.A., on September 23-27, 1990. The symposium continued the trans disciplinary character and comprehensive approach of the preceding five symposia. Gaseous Dielectrics VI is a detailed record of the symposium proceedings. It covers recent advances and developments in a wide range of basic, applied and industrial areas of gaseous dielectrics. It is hoped that Gaseous Dielectrics VI will aid future research and development in and encourage wider industrial use of gaseous dielectrics. The Organizing Committee of the Sixth International Symposium on Gaseous Dielectrics consisted of L. G. Christophorou (U.S.A.), F. Y. Chu (Canada), A. H. Cookson (U.S.A.), D. L. Damsky (U.S.A.), O. Farish (U.K.), I. Gallimberti (Italy), A. Garscadden (U.S.A.), E. Marode (France), T. Nitta (Japan), W. Pfeiffer (Germany), I. Sauers (U.S.A.), R. J. Van Brunt (U.S.A.), and W. Zaengl (Switzerland). The local arrangements committee consisted of members of the Health and Safety Research Division and personnel of the Conference Office of the Oak Ridge National Laboratory, and staff of the University of Tennessee (UTK). T
出版日期Book 1991
关键词Germany; Potential; design; development; dielectrics; electrons; future; high voltage; laser; material; phase;
版次1
doihttps://doi.org/10.1007/978-1-4615-3706-9
isbn_softcover978-1-4613-6648-5
isbn_ebook978-1-4615-3706-9
copyrightSpringer Science+Business Media New York 1991
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,Ergebnisse und Schlußfolgerungen,chment rate constant over a wide range of mean electron energies below ~ 1 eV increased by over 4 × 10. times for CH.C1 and by ~ 50 times for C.H.C1. In this paper we report our findings on the temperature enhanced electron attachment to these two molecules and indicate their potential use for dielectric and pulsed power switching applications.
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https://doi.org/10.1007/978-88-470-0582-2kinetics of this process is of the third or even fourth order:.In this paper we summarize the results of a series of our experiments on these systems in which the electron swarm method has been applied..
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https://doi.org/10.1007/978-3-642-49741-4. This enhanced stabilization rate is responsible for the observed synergetic effect. The conclusions are supported by an extended avalanche model which includes electron detachment and stabilizing ion conversion processes, next to the commonly assumed ionization and attachment processes.
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https://doi.org/10.1007/978-3-030-99339-9mechanism was found. A program was developed which allows the calculation of leader propagation from inception to the final breakdown. The main steps of the program are described. Computed and measured data are compared for different experimental conditions.
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Armed Forces and Society in Europe taking place during a surface discharge would, in fact, require the solution of a complicated coupled system composed of Poisson and transport equations together with suitable “constitutive” relations.
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Total Cross Sections for Electron Scattering and Attachment for SF6 and Its Electrical-Discharge by-in the discharge. Additionally, recent studies of SF. as an etching gas for semiconductor processing have indicated that stable sulfur oxyfluoride by-products can account for more than 10% of the neutral molecules in the plasma..
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