| 书目名称 | Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion | | 编辑 | Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanon | | 视频video | | | 概述 | Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers.Demo | | 丛书名称 | Integrated Circuits and Systems | | 图书封面 |  | | 描述 | .This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion..Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;.Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;.Enables design of smaller, cheaper and more efficient power supplies.. | | 出版日期 | Book 2018 | | 关键词 | Gallium Nitride; GaN device physics; GaN for Power Conversion; GaN transistors; GaN Reliability | | 版次 | 1 | | doi | https://doi.org/10.1007/978-3-319-77994-2 | | isbn_softcover | 978-3-030-08594-0 | | isbn_ebook | 978-3-319-77994-2Series ISSN 1558-9412 Series E-ISSN 1558-9420 | | issn_series | 1558-9412 | | copyright | Springer International Publishing AG, part of Springer Nature 2018 |
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发表于 2025-3-21 19:21:25
