Titlebook: Gallium Nitride Processing for Electronics, Sensors and Spintronics; Stephen J. Pearton,Cammy R. Abernathy,Fan Ren Book 2006 Springer-Verl

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Design and Fabrication of Gallium High-Power Rectifiers,itching speed, which is important for improving the efficiency of inductive motor controllers and power supplies. Both GaN and SiC power Schottky diodes have demonstrated shorter turn-on delays than comparable Si devices. In this chapter we review the design and fabrication of GaN power rectifiers.

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Nitride-Based Spintronics,erature will be a strong function of bandgap. In this chapter we review the current state of the art in producing room-temperature ferromagnetism in GaN-based materials, the origins of the magnetism and its potential applications.

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1619-0181 plementary material: .Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magne

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Design and Fabrication of Gallium High-Power Rectifiers, times larger and on-state resistance R. approximately 400 times lower at a given voltage. These characteristics have made GaN devices attractive for hybrid electric vehicles and power conditioning in large industrial motors. In particular, Schottky rectifiers are attractive because of their fast sw

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