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Titlebook: Gallium Nitride Electronics; Rüdiger Quay Book 2008 Springer-Verlag Berlin Heidelberg 2008 Materials for electronics.Materials processing.

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发表于 2025-3-21 16:08:57 | 显示全部楼层 |阅读模式
书目名称Gallium Nitride Electronics
编辑Rüdiger Quay
视频video
概述Comprehensive presentation of the state of the art in GaN electronics with strong emphasis on application.Comprehensive presentation - from materials to packaging.Interdisciplinary approach.Includes s
丛书名称Springer Series in Materials Science
图书封面Titlebook: Gallium Nitride Electronics;  Rüdiger Quay Book 2008 Springer-Verlag Berlin Heidelberg 2008 Materials for electronics.Materials processing.
描述.Gallium Nitride Electronics. covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of devices and circuits, epitaxial growth, device technology, modelling and characterization; and circuit examples are discussed. The book concludes with device reliability aspects and an overview of integration and packaging. This comprehensive monograph and tutorial is based on more than a decade of research on materials, devices, and circuits. It is of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; and to all scientists with a general interest in advanced electronics..
出版日期Book 2008
关键词Materials for electronics; Materials processing; Microelectronics; Semiconductors; electrical engineerin
版次1
doihttps://doi.org/10.1007/978-3-540-71892-5
isbn_softcover978-3-642-09098-1
isbn_ebook978-3-540-71892-5Series ISSN 0933-033X Series E-ISSN 2196-2812
issn_series 0933-033X
copyrightSpringer-Verlag Berlin Heidelberg 2008
The information of publication is updating

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发表于 2025-3-21 21:25:05 | 显示全部楼层
0933-033X materials to packaging.Interdisciplinary approach.Includes s.Gallium Nitride Electronics. covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of device
发表于 2025-3-22 00:43:56 | 显示全部楼层
https://doi.org/10.1007/978-3-642-28909-5n (MOCVD) is analyzed systematically. Nitride-specific material characterization, doping, and material quality issues are analyzed. Substrate properties are reviewed systematically with respect to electronic requirements.
发表于 2025-3-22 07:48:04 | 显示全部楼层
Annette Bruce Dr.,Christoph Jerominchottky and ohmic contacts, and lithography of optically transparent materials are discussed. State-of-the art recess processes and passivation technologies are analyzed. Bipolar device technology issues are reviewed.
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发表于 2025-3-22 15:39:12 | 显示全部楼层
Book 2008 graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; and to all scientists with a general interest in advanced electronics..
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发表于 2025-3-22 22:00:13 | 显示全部楼层
Device Processing Technology,chottky and ohmic contacts, and lithography of optically transparent materials are discussed. State-of-the art recess processes and passivation technologies are analyzed. Bipolar device technology issues are reviewed.
发表于 2025-3-23 03:21:51 | 显示全部楼层
Device Characterization and Modeling, involving pulsed-characterization and other advanced techniques are discussed. Large-signal characterization and modeling are discussed for nitride devices, including the modeling of contacts, diodes, dispersion, and thermal aspects.
发表于 2025-3-23 05:40:36 | 显示全部楼层
A Practical Case for Using Agile Methods,t between 0.5 and 100 GHz. Low-noise amplifiers are presented and analyzed for high-dynamic range, robustness, and high linearity. The last section of the chapter treats other circuits functions such as mixers and oscillators. Again, nitride-specific advantages and challenges are investigated.
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