Titlebook: Gallium Arsenide Digital Circuits; Omar Wing Book 1990 Kluwer Academic Publishers 1990 Multiplexer.Signal.communication.electronics.field-

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Transmission-Gate Logic,ar at the output. In addition, if the gate-to-source or gate-to-drain capacitance is comparable to the load capacitance C, a significant fraction of the control signal will be at the output and a logical error may be produced at the output of the inverter. Nevertheless, if the amplitude of the contr

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Book 1990circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non­ linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi­ mate circuit performance

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Wendelin Sprenger,Frank Schley,Jens Hoffmannar at the output. In addition, if the gate-to-source or gate-to-drain capacitance is comparable to the load capacitance C, a significant fraction of the control signal will be at the output and a logical error may be produced at the output of the inverter. Nevertheless, if the amplitude of the contr

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Jörn Harde,Maria Kirsche-Richter nominal value is 0.1 . for an enhancement transistor and approximately −1.0 . for a depletion transistor. From Chapters 3 and 5, we saw how the transfer curve and noise margins are affected by variations of the threshold voltage. In all cases, the circuit threshold shifts by an amount approximately equal to the change in the threshold voltage.

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Source-Coupled Logic Circuits, nominal value is 0.1 . for an enhancement transistor and approximately −1.0 . for a depletion transistor. From Chapters 3 and 5, we saw how the transfer curve and noise margins are affected by variations of the threshold voltage. In all cases, the circuit threshold shifts by an amount approximately equal to the change in the threshold voltage.

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0893-3405 f one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat­ ing speed will further incre

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Gregor Antochin,Wolf Steinbrecher .., is often greater than the threshold voltage of the enhancement transistor of the following stage. As a result, the noise margins are often comparable to the threshold voltage, so if the latter changes, the noise margins could become unacceptably small.

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Evolution of Project Managementeffect transistor does not have any pn-junction around its drain and source terminals and therefore the interelectrode capacitance in a GaAs device is much smaller. Smaller capacitance and higher current density, combined with a smaller voltage swing in a GaAs transistor, contribute to the realization of low-power, high-speed circuits.