Titlebook: GaN-Based Laser Diodes; Towards Longer Wavel Wolfgang G. Scheibenzuber Book 2012 Springer-Verlag Berlin Heidelberg 2012 Green Laser Diode.O

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GaN-Based Laser Diodes978-3-642-24538-1Series ISSN 2190-5053 Series E-ISSN 2190-5061

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https://doi.org/10.1007/b106969er communications and data storage on CDs and DVDs. The red and infrared laser diodes for these applications are based on the III-IV semiconductor systems AlGaInP and InGaAsP and they are commercially available for a broad spectrum of emission wavelengths.

LITHE

P. W. Brennecke,E. W. Justi,J. Kleinwächter devices due to ohmic losses and non-radiative recombination is a limiting factor, as an increase in device temperature results in a reduction of output power, a redshift of the emission wavelength, and thermal lensing. Therefore it is crucial to investigate the mechanisms of self-heating in laser d

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