| 书目名称 | Fundamentals of Power Semiconductor Devices |
| 编辑 | B. Jayant Baliga |
| 视频video | http://file.papertrans.cn/351/350482/350482.mp4 |
| 概述 | Provides extensive analytical formulations for design and analysis of structures.Includes numerical simulation examples to elucidate the operating physics and validate the models.Analyzes device perfo |
| 图书封面 |  |
| 描述 | .Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devices and includes the unique attributes and design requirements for emerging silicon carbide devices.. |
| 出版日期 | Book 20081st edition |
| 关键词 | Leistungsfeldeffekttransistor; Schottky rectifiers; Thyristor; Transistor; bipolar junction transistor; f |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-0-387-47314-7 |
| isbn_softcover | 978-1-4899-7765-6 |
| isbn_ebook | 978-0-387-47314-7 |
| copyright | Springer-Verlag US 2008 |
|Archiver|手机版|小黑屋|
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