| 书目名称 | Fundamentals of Bias Temperature Instability in MOS Transistors |
| 副标题 | Characterization Met |
| 编辑 | Souvik Mahapatra |
| 视频video | |
| 概述 | Provides a comprehensive resource covering characterization methods, modeling techniques and gate insulator process dependence of BTI.Accurately establishes the physical mechanism of BTI, accurate mod |
| 丛书名称 | Springer Series in Advanced Microelectronics |
| 图书封面 |  |
| 描述 | .This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then |
| 出版日期 | Book 2016 |
| 关键词 | AC Stress; BTI; BTI Degradation; BTI Recovery; BTI in MOSFETs; Bias Temperature Instability; Charge Pumpin |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-81-322-2508-9 |
| isbn_softcover | 978-81-322-3424-1 |
| isbn_ebook | 978-81-322-2508-9Series ISSN 1437-0387 Series E-ISSN 2197-6643 |
| issn_series | 1437-0387 |
| copyright | Springer India 2016 |
发表于 2025-3-21 17:55:45
