| 书目名称 | Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices | | 编辑 | Eric Garfunkel,Evgeni Gusev,Alexander Vul’ | | 视频video | | | 丛书名称 | NATO Science Partnership Subseries: 3 | | 图书封面 |  | | 描述 | An extrapolation of ULSI scaling trends indicates that minimumfeature sizes below 0.1 mu and gate thicknesses of <3 nm will berequired in the near future. Given the importance of ultrathin gatedielectrics, well-focused basic scientific research and aggressivedevelopment programs must continue on the silicon oxide, oxynitride,and high K materials on silicon systems, especially in the critical,ultrathin 1-3 nm regime. The main thrust of the present book isa review, at the nano and atomic scale, the complex scientific issuesrelated to the use of ultrathin dielectrics in next-generationSi-based devices. The contributing authors are leading scientists,drawn from academic, industrial and government laboratories throughoutthe world, and representing such backgrounds as basic and appliedphysics, chemistry, electrical engineering, surface science, andmaterials science. ..Audience:. Both expert scientists and engineers who wish to keepup with cutting edge research, and new students who wish to learn moreabout the exciting basic research issues relevant to next-generationdevice technology. | | 出版日期 | Book 1998 | | 关键词 | Surface science; chemistry; cutting; defects; dielectrics; electrical engineering; materials science; oxida | | 版次 | 1 | | doi | https://doi.org/10.1007/978-94-011-5008-8 | | isbn_softcover | 978-0-7923-5008-8 | | isbn_ebook | 978-94-011-5008-8Series ISSN 1388-6576 | | issn_series | 1388-6576 | | copyright | Springer Science+Business Media Dordrecht 1998 |
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发表于 2025-3-21 16:21:08
