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Titlebook: Europium Monoxide; Semiconductor and Fe Arnold S. Borukhovich,Alexey V. Troshin Book 2018 Springer International Publishing AG, part of Spr

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楼主: CANTO
发表于 2025-3-23 12:29:34 | 显示全部楼层
Features of Formation of Electron Band Structure and Physical Properties of Ferromagnetic Semiconduc the modern electron density functional theory is given. All known unique physical parameters of it monoxide including as the phase of variable composition are presented. What determines the nature of the electronic insulator-metal transition in EuO.-phase at T < T..
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978-3-030-09571-0Springer International Publishing AG, part of Springer Nature 2018
发表于 2025-3-23 19:34:32 | 显示全部楼层
发表于 2025-3-24 00:39:50 | 显示全部楼层
V. Arakelian,J. Xu,J. P. Le BaronThe methods of synthesis of europium monoxide in the form of powders, single crystals, thin films are described. Its phase diagram is shown as  a phase of variable composition, as well as its thermodynamic parameters.
发表于 2025-3-24 05:27:57 | 显示全部楼层
Michel Guillot,Vladimir Canudas-RomoThe physical principles of increasing the Curie temperature of a magnetic semiconductor and their realization in Eu.R.​O solid solutions are discussed (R - Sm, Gd). The possible role of magnetic impurity states in the manifestation of the magnetic heterogeneity effect in them is traced.
发表于 2025-3-24 10:05:08 | 显示全部楼层
Tensions in the Linguistic SpaceTheoretical prerequisites for creating devices of cryogenic spin electronics at the implementation of the Jozephson effect in a superconducting tunnel transition with a ferromagnetic barrier are presented.
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https://doi.org/10.1007/978-1-4020-5839-4The results of creation, investigation and application of the metal/ferromagnetic semiconductor (EuO) heterostructures and ferromagnetic semiconductor (EuO)/semiconductor as a basis of submillimeter spin electronics are presented.
发表于 2025-3-24 21:36:00 | 显示全部楼层
https://doi.org/10.1007/978-3-031-11236-2Results of the creation of a high-temperature spin injector and a spin-wave transistor based on EuO are presented. The structure and properties of the EuO:Fe composite providing the ability of its thin films to be promising for creating of semiconductor spin electronic devices that are capable operated at the room temperatires, are given.
发表于 2025-3-25 03:02:38 | 显示全部楼层
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