Titlebook: Emerging Resistive Switching Memories; Jianyong Ouyang Book 2016 The Author(s) 2016 Bistable devices.Charge trapping.Fabrication of novel

Servile

Operationen in der Sella-Chiasma-Region,perties. The one-dimensional materials include nanowires and carbon nanotubes (CNTs), and the two-dimensional materials include graphene and other two-dimensional materials, such as MoS.. These materials were also investigated for RRAMs.

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Agility

Jianyong OuyangDetails how charge trapping can occur on nanoparticles and at interface between bulk metal and metal nanoparticles.Explains how charge transfer can lead to resistive switches.Demonstrates how conducti

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JEER

Introduction,density and high speed. Today, the popular memory devices in market are silicon-based devices. There are three leading memories: flash memories, dynamic random access memories (DRAMs), and hard-disk drives (HDDs) [1, 2]. But all of them have obstacles that are difficult to overcome. Silicon-based fl

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WAG

RRAMs with Organic Donor and Acceptor,ified into donor and acceptor. Oxidation or reduction can take place through chemical or electrochemical reaction. After oxidation or reduction, the conductivity of the conjugated organic molecules or polymers is dramatically increased, because the oxidation or reduction can induce charges on the hi