| 书目名称 | Emerging Resistive Switching Memories |
| 编辑 | Jianyong Ouyang |
| 视频video | |
| 概述 | Details how charge trapping can occur on nanoparticles and at interface between bulk metal and metal nanoparticles.Explains how charge transfer can lead to resistive switches.Demonstrates how conducti |
| 丛书名称 | SpringerBriefs in Materials |
| 图书封面 |  |
| 描述 | This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.. |
| 出版日期 | Book 2016 |
| 关键词 | Bistable devices; Charge trapping; Fabrication of novel non-vole; rest; random-access mem; ; Memory devi |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-319-31572-0 |
| isbn_softcover | 978-3-319-31570-6 |
| isbn_ebook | 978-3-319-31572-0Series ISSN 2192-1091 Series E-ISSN 2192-1105 |
| issn_series | 2192-1091 |
| copyright | The Author(s) 2016 |
发表于 2025-3-21 19:26:04
