Titlebook: Emerging Non-Volatile Memories; Seungbum Hong,Orlando Auciello,Dirk Wouters Book 2014 Springer Science+Business Media New York 2014 FMRAM.

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Navier–Stokes Equations on R3 × [0, T] has resulted from the research and development in the field of spin electronics. Since the discovery of giant magnetoresistance (GMR) in 1988 (A.Fert, P.Grunberg, Nobel Prize 2007), several breakthrough discoveries have made these device developments possible (spin valves 1990, tunnel magnetoresist

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Mariarosaria Padula,Konstantin Pileckass in the emerging field of multiferroic-based memories. In the last decade, considerable attention has been focused on the search for and characterization of new multiferroic materials as scientists and researchers have been driven by the promise of exotic materials functionality (especially electri

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CLOT

Basic Principles of Navigated TMS memories which are non-volatile, have random access, and have fast programming times. This chapter is focused on electrically induced resistive change memories (including the resistive switching materials and mechanism) and other applications. Resistive random access memory (RRAM) has the simplest

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PALSY

Seungbum Hong,Orlando Auciello,Dirk WoutersProvides an overview of non-volatile memory fundamentals.Covers key memory technologies.Written by experts from both academia and industry

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https://doi.org/10.1007/978-3-642-20746-4emories (FeRAM) [2–16]. The research performed during the last two decades focused on developing both the scientific and technological bases of ferroelectric films and layered heterostructures and their integration into ever evolving device architectures and the development of new device architectures for high-performance FeRAMs [1–10, 14–17].