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Titlebook: Emerging Non-Volatile Memories; Seungbum Hong,Orlando Auciello,Dirk Wouters Book 2014 Springer Science+Business Media New York 2014 FMRAM.

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发表于 2025-3-21 17:40:12 | 显示全部楼层 |阅读模式
书目名称Emerging Non-Volatile Memories
编辑Seungbum Hong,Orlando Auciello,Dirk Wouters
视频video
概述Provides an overview of non-volatile memory fundamentals.Covers key memory technologies.Written by experts from both academia and industry
图书封面Titlebook: Emerging Non-Volatile Memories;  Seungbum Hong,Orlando Auciello,Dirk Wouters Book 2014 Springer Science+Business Media New York 2014 FMRAM.
描述.This book. is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics.. Emerging. .Non-Volatile Memories .is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory..This book also:.Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others..Provides an overview of non-volatile memory fundamentals..Broadens readers’ understanding of future trends in non-volatile memories..
出版日期Book 2014
关键词FMRAM; FeRAM; Ferroelectric memories; Information storage; MFRAM; Magnetic memories; Multi-ferroic memorie
版次1
doihttps://doi.org/10.1007/978-1-4899-7537-9
isbn_softcover978-1-4899-7930-8
isbn_ebook978-1-4899-7537-9
copyrightSpringer Science+Business Media New York 2014
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发表于 2025-3-21 21:12:06 | 显示全部楼层
Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuitsl electronic systems in which logic and memory are intimately combined in nonvolatile logic components (concept of nonvolatile CPU)..The chapter is organized as follows: we first explain the physics of the main phenomena involved in the working principle of MRAM. We then describe the various types o
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Ferroelectric Probe Storage Devicesnm in size. The tool to write information is very simple and the reader is available in various forms including field effect transistors and capacitors. Well-established hard disk drive system or newly developed micro-electromechanical system (MEMS) can be the candidates for realizing the device.
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发表于 2025-3-22 14:43:56 | 显示全部楼层
Navier–Stokes Equations on R3 × [0, T]l electronic systems in which logic and memory are intimately combined in nonvolatile logic components (concept of nonvolatile CPU)..The chapter is organized as follows: we first explain the physics of the main phenomena involved in the working principle of MRAM. We then describe the various types o
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发表于 2025-3-22 23:32:21 | 显示全部楼层
https://doi.org/10.1007/978-981-99-8207-3nm in size. The tool to write information is very simple and the reader is available in various forms including field effect transistors and capacitors. Well-established hard disk drive system or newly developed micro-electromechanical system (MEMS) can be the candidates for realizing the device.
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978-1-4899-7930-8Springer Science+Business Media New York 2014
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