Titlebook: Emerging Applications of Vacuum-Arc-Produced Plasma, Ion and Electron Beams; Efim Oks,Ian Brown Book 2002 Kluwer Academic Publishers 2002

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Multibody Mechanics and Visualizatione samples were analyzed by RBS technique using 1.4 MeV He ions. The results show that the retained vs. implanted dose dependence saturates at implanted doses of the order of 1017 cm−2, due to the sputtering effects. The maximum retained doses obtained for Cu and Sn amount to 5.4×1016cm−2 and 1.2 ×1015cm−2, respectively.

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https://doi.org/10.1007/1-4020-2982-9a distance of 40 cm from the discharge gap. Comparison is performed of these data with, the corresponding values for metal ions obtained from a laser produced plasma and it is shown that the vacuum discharge plasma as a source of the multiply charged metal ions is rather more effective than the laser one.

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https://doi.org/10.1007/978-3-7091-1289-2temperature oxidation resistance of the TiN coating by implanting Si ions alone. Thermogravimetry measurements show that 1×1017 cm−2 Si ions implanted from modified MEVVA-type ion source operated at 75 kV results in more than twofold reduction of the oxidation rate at 630¼.

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Sources of Multiply Charged Metal Ions: Vacuum Discharge or Laser Produced Plasma?,a distance of 40 cm from the discharge gap. Comparison is performed of these data with, the corresponding values for metal ions obtained from a laser produced plasma and it is shown that the vacuum discharge plasma as a source of the multiply charged metal ions is rather more effective than the laser one.